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BBY 51-03W
Silicon Tuning Diode
l High Q hyperabrupt tuning diode l Designed for low tuning voltage operation l For VCO's in mobile communications equipment
Type BBY 51-03W
Marking H
Ordering Code (tape and reel) Q62702-B663
Pin Configuration Package 1 2 C1 A2 SOD-323
1)
Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BBY 51-03W 7 20 -55 +150C -55...+150C Unit V mA C C
VR IF Top Tstg
______________________________
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 03.05.95
BBY 51-03W
Electrical Characteristics
at TA = 25 C, unless otherwise specified.
Parameter
Symbol min.
Value typ. max.
Unit
DC Characteristics Reverse current VR = 6 V VR = 6 V, TA = 65 C Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, 4 V, f = 1 MHz Capacitance difference VR = 1 V, 3 V,f = 1MHz VR = 3 V, 4 V,f = 1MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Serien inductance
IR
5.3 4.2 3.5 3.1 1.75 1.78 0.50 0.37 0.12 2 10 200
nA
CT
4.5 3.4 2.7 2.5 6.1 5.2 4.6 3.7
pF
CT1V/CT4V
1.55 2.2
pF
C1V-C3V C3V-C4V rs CC Ls
1.4 0.30 -
2.2 0.7 pF nH
____________________
1) Without 100 % test, correlation limits
Semiconductor Group
2
Edition A01, 03.05.95
BBY 51-03W
Dioden capacitance CT = f (VR*) f = 1 MHz Temperature coefficient of the diode
capacitance TCC = f (VR), f = 1 MHz
ppm/C
T
CC
Semiconductor Group
3
Edition A01, 03.05.95

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